Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors

Author:

Kawanago Takamasa1,Ikoma Ryo1,Oba Tomoaki1,Takagi Hiroyuki1

Affiliation:

1. Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, Japan

Funder

MEXT | Japan Society for the Promotion of Science

Yazaki Memorial Foundation for Science and Technology

MEXT | JST | Core Research for Evolutional Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference23 articles.

1. Y. Taur and T. H. Ning , Fundamentals of Modern VLSI Devices ( Cambridge University Press, Cambridge, MA, 1998).

2. S. M. Sze , Physics of Semiconductor Devices, 3rd ed. ( Wiley, New York, 2007).

3. E. Nicollian and J. Brews , MOS (Metal Oxide Semiconductor) Physics and Technology ( Wiley, New Jersey, 2003).

4. High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

5. M. Nagamine , H. Itoh , H. Satake , and A. Toriumi , in Proceedings of the IEEE International Electron Devices Meeting (1998), p. 593.

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