Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference23 articles.
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1. Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane;Heliyon;2023-08
2. Injection of low-energy SiCH5+ ion-beam to Si substrate during chemical vapor deposition process using methylsilane;AIP Advances;2022-11-01
3. Low-energy oxygen ion beam induced chemical vapor deposition using methylsilane or dimethylsilane for the formation of silicon dioxide films;Thin Solid Films;2022-10
4. Low-energy Ar+ ion beam induced chemical vapor deposition of silicon carbide films using dimethylsilane;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-09
5. Production of low-energy SiCH3+ and SiC2H7+ ion beams for 3C-SiC film formation by selecting fragment ions from dimethylsilane;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-01
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