Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment-Reference-Cited by-同舟云学术

Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment

Published:2011-04-20 Issue:4 Volume:50 Page:04DA11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee DongHun,Imajo Hideto,Kanashima Takeshi,Okuyama Masanori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference16 articles.

1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

2. Interfacial oxide formation from intrinsic oxygen in W–HfO2 gated silicon field-effect transistors

3. Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates

4. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study

5. Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference

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