Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates
2. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
3. Air‐stable Cl‐terminated Ge(111)
4. Hydrogen passivation of germanium (100) surface using wet chemical preparation
5. Surface passivation using ultrathin AlNx film for Ge–metal–oxide–semiconductor devices with hafnium oxide gate dielectric
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tris(Trimethylsilyl)Germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces;Solid State Phenomena;2016-09
2. Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high-k-gate-stacks;Journal of Applied Physics;2015-12-14
3. A first principles study of H2S adsorption and decomposition on a Ge(100) surface;RSC Advances;2015
4. Fermi-Level Depinning of Ge Schottky Junction Using Se Treatment;ECS Transactions;2014-08-12
5. Depinning of the Fermi level at the Ge Schottky interface through Se treatment;Scripta Materialia;2013-12
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