Interfacial oxide formation from intrinsic oxygen in W–HfO2 gated silicon field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1834995
Reference15 articles.
1. Fabrication of midgap metal gates compatible with ultrathin dielectrics
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