Theoretical Study of Exposure Latitude of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference38 articles.
1. Extreme Ultraviolet Lithography Development in the United States
2. Recent status and future direction of EUV resist technology
3. Resist blur and line edge roughness
4. Characterization of positive photoresist
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theoretical study of interfacial effects on low-energy electron dynamics in chemically amplified resist processes of photomask fabrication;Japanese Journal of Applied Physics;2021-08-01
2. Resist Thickness Dependence of Latent Images in Chemically Amplified Resists Used for Electron Beam Lithography;Journal of Photopolymer Science and Technology;2021-06-11
3. Resist thickness dependence of line width roughness of chemically amplified resists used for electron beam lithography;Japanese Journal of Applied Physics;2020-07-14
4. EUV resist simulation based on process parameters of pattern formation reaction;SPIE Proceedings;2014-04-17
5. Fabrication of Nanosized Antireflection Patterns on Surface of Aspheric Lens Substrate by Nanoimprint Lithography;Applied Physics Express;2013-05-01
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