Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices-Reference-Cited by-同舟云学术

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Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

Published:2011-09-05 Issue:9 Volume:50 Page:090201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Noborio Masato,Grieb Michael,Bauer Anton J.,Peters Dethard,Friedrichs Peter,Suda Jun,Kimoto Tsunenobu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference27 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Status and prospects for SiC power MOSFETs

3. 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications

4. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs

5. 1300-V 6H-SiC lateral MOSFETs with two RESURF zones

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1. Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing;Journal of Applied Physics;2023-06-06

2. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021

3. Interface between Al2O3and 4H-SiC investigated by time-of-flight medium energy ion scattering;Journal of Physics D: Applied Physics;2017-11-17

4. Improvement on the electrical characteristics of Pd/HfO 2 /6H-SiC MIS capacitors using post deposition annealing and post metallization annealing;Applied Surface Science;2017-08

5. Non uniform thermal oxidation of SiC and its impact on electrical characteristics;Japanese Journal of Applied Physics;2016-07-14

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