Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
1. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop
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1. Electromechanically Coupled III-N Quantum Dots;Nanomaterials;2023-01-05
2. Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy;Crystals;2021-10-27
3. Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes;CrystEngComm;2021
4. Evolution mechanism of InGaN quantum dots and their optical properties;Optical Materials;2020-01
5. Abnormal Stranski–Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices;ACS Applied Materials & Interfaces;2018-12-06
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