Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
2. A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
3. Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method
4. Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs
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1. Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 1019 cm–3;Nano Letters;2016-01-11
2. Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics;Japanese Journal of Applied Physics;2012-06-20
3. Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics;Japanese Journal of Applied Physics;2012-06-01
4. Gate Capacitance Modeling and Diameter-Dependent Performance of Nanowire MOSFETs;IEEE Transactions on Electron Devices;2012-04
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