Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics-Reference-Cited by-同舟云学术

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Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics

Published:2012-06-20 Issue: Volume:51 Page:06FE20
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shin Sunhae,Kang In Man,Kim Kyung Rok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design;Microelectronics Journal;2023-09

2. Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET;Silicon;2021-01-03

3. RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver;Journal of Computational Electronics;2019-07-26

4. Synthesis and Electrochemical Properties of LiFePO₄/C for Lithium Ion Batteries;Journal of Nanoscience and Nanotechnology;2015-03-01

5. Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis;Japanese Journal of Applied Physics;2013-04-01

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