Effects of Post-SiH4and Plasma Treatments on Chemical Vapor Deposited Cu Seeds with Chemical Vapor Deposited TiN Barrier in Porous Low Dielectric Constant and Cu Integration-Reference-Cited by-同舟云学术

Effects of Post-SiH4and Plasma Treatments on Chemical Vapor Deposited Cu Seeds with Chemical Vapor Deposited TiN Barrier in Porous Low Dielectric Constant and Cu Integration

Published:2011-07-20 Issue:7 Volume:50 Page:076501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Pyo Sung Gyu,Park Shangkyun,Park Hansoo,Lee Donghyun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Use of novel chemical dipping method for the stability evaluation of an ultrathin TaNx barrier in Cu interconnects

2. A Study on Seed Damage in Plating Electrolyte and Its Repairing in Cu Damascene Metallization

3. Optimization of a Pretreatment for Copper Electroless Deposition on Ta Substrates

4. Electrochemical Deposition of Nanoscaled Palladium Catalysts for 65 nm Copper Metallization

5. Sn/Pd Catalyzation and Electroless Cu Deposition on TaN Diffusion Barrier Layers

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3. Electron Transport Properties in HSi(OC2H5)3Vapor;Japanese Journal of Applied Physics;2011-12-01

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