Annealing Effects on Ge/SiO2Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates-Reference-Cited by-同舟云学术

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Annealing Effects on Ge/SiO2Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates

Published:2011-04-20 Issue:4 Volume:50 Page:04DA13
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoshitake Osamu,Kikkawa Jun,Nakamura Yoshiaki,Toyoda Eiji,Isogai Hiromichi,Izunome Koji,Sakai Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

2. Germanium-on-insulator substrates by wafer bonding

3. Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors

4. Giant Ge-on-Insulator Formation by Si–Ge Mixing-Triggered Liquid-Phase Epitaxy

5. Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Mobility Degradation Factors and Performance Improvement of Ultrathin-Body Germanium-on-Insulator MOSFETs by GOI Thinning Using Plasma Oxidation;IEEE Transactions on Electron Devices;2017-04

2. Innovative Ge–SiO2 bonding based on an intermediate ultra-thin silicon layer;Journal of Materials Science: Materials in Electronics;2017-03-29

3. III–V/Ge channel MOS device technologies in nano CMOS era;Japanese Journal of Applied Physics;2015-05-07

4. Phonon-drag Contribution to Seebeck Coefficient of Ge-on-insulator Substrate Fabricated by Wafer Bonding Process;Makara Journal of Technology;2015-04-30

5. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO 2 /Si substrates;Applied Surface Science;2014-10

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