Effects of Growth Temperatures on Crystal Quality of GaN by Vapor Phase Epitaxy Using GaCl$_{3}$ and NH$_{3}$
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference23 articles.
1. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
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4. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
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1. Laser lift-off technique for applications in III-N microelectronics: A review;Microelectronic Engineering;2024-07
2. Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl3 gas supply system;Japanese Journal of Applied Physics;2022-07-01
3. Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process;Nanoscale;2020
4. Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth;physica status solidi (a);2019-12-17
5. GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation;Japanese Journal of Applied Physics;2019-05-17
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