Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells-Reference-Cited by-同舟云学术

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Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells

Published:2012-03-12 Issue:4 Volume:5 Page:042301
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Sameshima Takashi,Miyazaki Naoto,Tsuchiya Yuki,Hashiguchi Hiroki,Tachibana Tomihisa,Kojima Takuto,Ohshita Yoshio,Arafune Koji,Ogura Atsushi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=4/a=042301/pdf

Reference19 articles.

1. Influence of Defects on Solar Cell Characteristics

2. Electron-beam-induced current study of grain boundaries in multicrystalline silicon

3. Direct calculation of two‐dimensional collection probability inpnjunction solar cells, and study of grain‐boundary recombination in polycrystalline silicon cells

4. Impact of Metal Contamination in Silicon Solar Cells

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1. Misorientation increase of small-angle grain boundaries during directional solidification of silicon;Journal of Crystal Growth;2024-10

2. Using Electron Microscopy to Explore Solar Cell Interfaces: Microstructures, Efficiency, and Stability;ACS Energy Letters;2024-07-05

3. Numerical Analysis of Melt Flow and Interface Deflection during the Growth of Directional Solidified Multi-Crystalline Silicon Ingots of Three Different Dimension;Silicon;2021-04-08

4. Reduction of Carbon and Oxygen Impurities in mc-Silicon Ingot Using Molybdenum Gas Shield in Directional Solidification Process;Silicon;2020-10-22

5. Interfacial atomic structure and electrical activity of nano-facetted CSL grain boundaries in high-performance multi-crystalline silicon;Journal of Applied Physics;2020-03-31

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