AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility-Reference-Cited by-同舟云学术

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Published:2011-12-22 Issue:1 Volume:5 Page:011002
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Cheng Kai,Liang Hu,Hove Marleen Van,Geens Karen,Jaeger Brice De,Srivastava Puneet,Kang Xuanwu,Favia Paola,Bender Hugo,Decoutere Stefaan,Dekoster Johan,Borniquel Jose Ignacio del Agua,Jun Sung Won,Chung Hua

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=1/a=011002/pdf

Reference20 articles.

1. A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

2. GaN Power Transistors on Si Substrates for Switching Applications

3. 20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

4. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

5. GaN growth on 150-mm-diameter (111) Si substrates

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