Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System-Reference-Cited by-同舟云学术

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Layer-By-Layer Controlled Digital Etching by Means of an Electron-Beam-Excited Plasma System

Published:1990-10-20 Issue:Part 1, No. 10 Volume:29 Page:2216-2219
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Meguro Takashi,Ishii Masashi,Kodama Hirokazu,Hamagaki Manabu,Hara Tamio,Yamamoto Yasuhiro,Aoyagi Yoshinobu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low damage atomic layer etching technology for gate recessed fabrication;Vacuum;2023-11

2. Plasma application in atomic layer etching;Physics of Plasmas;2023-08-01

3. Atomic Layer Processes for Material Growth and Etching—A Review;IEEE Transactions on Semiconductor Manufacturing;2021-11

4. Discharge physics and atomic layer etching in Ar/C4F6 inductively coupled plasmas with a radio frequency bias;Physics of Plasmas;2021-06

5. Cl2/Ar based atomic layer etching of AlGaN layers;Journal of Vacuum Science & Technology A;2019-07

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