Infrared Characterization of Interface State Reduction by F2Treatment in SiO2/Si Structure using Photo-CVD SiO2Film
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characterization of Interface States of HfO2/Ge with Fluorine Treatment by Using DLTS/ICTS;ECS Transactions;2010-10-01
2. Fixed-Oxide-Charge Characterization by Photoreflec-tance Spectroscopy in HfO2 on Ge treated by Fluorine;ECS Transactions;2008-10-03
3. Molecular orbital analysis of reaction processes of fluorine with H-terminated silicon (111) and (100) surfaces;Journal of Applied Physics;1999-01
4. Surface characterization using infrared reflection absorption spectroscopy on Si(100) processed by wet cleaning and gas treatment;Applied Surface Science;1997-04
5. Characterization of Charged Traps nearSi–SiO2Interface in Photo-Induced Chemical Vapor DepositedSiO2Film;Japanese Journal of Applied Physics;1996-02-28
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