Characterization of Interface States of HfO2/Ge with Fluorine Treatment by Using DLTS/ICTS

Author:

Kanashima Takeshi,Yoshioka Yuichi,Lee Dong-Hun,Okuyama Masanori

Abstract

Deep level transient spectroscopy (DLTS) technique that has some merits such as no assumption of leakage mechanism and characterization of both majority and minority carrier traps is applied for characterization of interface state density to HfO2/Ge gate stack. DLTS and isothermal capacitance transient spectroscopy (ICTS) signals of HfO2/Ge gate stack can be detected, and the results of these measurements show that interface state densities of majority and minority carriers can be reduced by fluorine treatment, and no new traps are created by this treatment. So, fluorine treatment is useful to improve the device performance. Moreover, DLTS and ICTS signals can be simultaneously obtained, and capture cross-section can be estimated by using these results.

Publisher

The Electrochemical Society

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy;2019 34th Symposium on Microelectronics Technology and Devices (SBMicro);2019-08

2. Deep-Level Transient Spectroscopy of MOS Capacitors on GeSn Epitaxial Layers;ECS Transactions;2013-03-15

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