Molecular orbital analysis of reaction processes of fluorine with H-terminated silicon (111) and (100) surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369436
Reference15 articles.
1. Surface treatment effects on microscopic Si surface structure and SiSiO2 interface state
2. Reduction of interface‐state density by F2treatment in a metal‐oxide‐semiconductor diode prepared from a photochemical vapor deposited SiO2film
3. Infrared Characterization of Interface State Reduction by F2Treatment in SiO2/Si Structure using Photo-CVD SiO2Film
4. Fluorine Termination of Silicon Surface by F2and Succeeding Reaction with Water
5. Characterization of F2Treatment Effects on Si(100) Surface and Si(100)/SiO2Interface
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1. Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method;Applied Surface Science;2010-11
2. Fundamental beam studies of deuterium and fluorine radical reaction kinetics on surfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
3. Theoretical analysis of methanol and hydrogen adsorptions on SnO2 by molecular orbital calculation;Sensors and Actuators B: Chemical;2000-06
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