Some Properties of Silicon Nitride Films Produced by Radio Frequency Glow Discharge Reaction of Silane and Nitrogen-Reference-Cited by-同舟云学术

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Some Properties of Silicon Nitride Films Produced by Radio Frequency Glow Discharge Reaction of Silane and Nitrogen

Published:1969-07 Issue:7 Volume:8 Page:876-882
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuwano Yukinori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature PECVD-deposited silicon nitride thin films for sensor applications;Surface and Coatings Technology;2001-07

2. Physical properties of dual ion beam deposited (B0.5−xSix)N0.5 films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-07

3. Formation of silicon nitride films by remote plasma-enhanced chemical vapour deposition;Advanced Materials for Optics and Electronics;1993-12

4. The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition;Thin Solid Films;1991-09

5. Effect of Oxygen Doping into SiBN Ternary Film;Japanese Journal of Applied Physics;1990-09-20

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