545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density-Reference-Cited by-同舟云学术

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

Published:2010-09-03 Issue:9 Volume:3 Page:091201
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Kasai Jun-ichi,Akimoto Ryouichi,Kuwatsuka Haruhiko,Hasama Toshifumi,Ishikawa Hiroshi,Fujisaki Sumiko,Kikawa Takeshi,Tanaka Sigehisa,Tsuji Shinji,Nakajima Hiroshi,Tasai Kunihiko,Takiguchi Yoshiro,Asatsuma Tsunenori,Tamamura Koshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=9/a=091201/pdf

Reference13 articles.

1. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

2. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

3. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

4. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

5. Room temperature continuous operation of blue-green laser diodes

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