Fine Structure Due to Donor–Acceptor Pair Luminescence in Compensated Si
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=7/a=071301/pdf
Reference8 articles.
1. Pair Spectra and "Edge" Emission in Gallium Phosphide
2. Radiative Spectra from Shallow Donor-Acceptor Electron Transfer in Silicon
3. Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
4. Simultaneous determination of the total content of boron and phosphorus in high‐resistivity silicon by ir spectroscopy at low temperatures
5. Measuring dopant concentrations in compensated p-type crystalline silicon via iron-acceptor pairing
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1. High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and gallium;Journal of Science: Advanced Materials and Devices;2023-12
2. Systematic variation of photoluminescence spectra with donor and acceptor concentrations ranging from 1 × 1010 to 1 × 1020 cm−3 in Si;Japanese Journal of Applied Physics;2022-07-19
3. Donor–Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride;Nano Letters;2022-01-24
4. Spatially resolved defects parameters of the D1 dislocation center in silicon using temperature- and injection-dependent hyperspectral photoluminescence mapping;Solar Energy Materials and Solar Cells;2021-08
5. Introductory lecture: origins and applications of efficient visible photoluminescence from silicon-based nanostructures;Faraday Discussions;2020
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