Si and SiO2Etching Characteristics by Fluorocarbon Ion Beam
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/18/i=12/a=2309/pdf
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3. Hydrogen plasma etching of silicon dioxide in a hollow cathode system;Thin Solid Films;2010-04
4. Structure of surface reaction layer of poly-Si etched by fluorocarbon plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-03
5. Measurements of desorbed products by plasma beam irradiation on SiO2;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-11
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