Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=2/a=024104/pdf
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1. An insulator-lined silicon substrate-via technology with high aspect ratio
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3. Reliability of Schottky Contacts on AlGaN
4. The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
5. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
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