The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368270
Reference14 articles.
1. Schottky barrier onn‐type GaN grown by hydride vapor phase epitaxy
2. The barrier height and interface effect of Au-n-GaN Schottky diode
3. Characterisation of Pd Schottky barrier on n-type GaN
4. Schottky barrier properties of various metals on n-type GaN
5. High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
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