Effective Species in Inductively Coupled Nitrogen Plasma for Silicon Nitriding
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=8/a=086201/pdf
Reference19 articles.
1. Surface nitridation of silicon dioxide with a high density nitrogen plasma
2. Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment
3. Growth of ultrathin silicon nitride on Si(111) at low temperatures
4. Damage-Free and Hydrogen-Free Nitridation of Silicon Substrate by Nitrogen Radical Source
5. Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry
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1. Effect of discharge tube temperature on ${{\rm{N}}}_{2}({A}^{3}{{\rm{\Sigma }}}_{u}^{+})$ and ${\rm{N}}{(}^{4}{S}^{{\rm{o}}})$ densities in remote nitrogen plasma;Japanese Journal of Applied Physics;2020-08-25
2. Nitrogen Fixation in a Plasma/Liquid Interfacial Reaction and Its Switching between Reduction and Oxidation;The Journal of Physical Chemistry C;2020-04-07
3. Suppression of carbon desorption from 4H-SiC by irradiating a remote nitrogen plasma at a low temperature;Japanese Journal of Applied Physics;2018-04-09
4. Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas;Japanese Journal of Applied Physics;2016-02-16
5. Lifetime of Molecular Nitrogen at Metastable A3Σu+State in Afterglow of Inductively-Coupled Nitrogen Plasma;Japanese Journal of Applied Physics;2012-12-01
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