Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode-Reference-Cited by-同舟云学术

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Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode

Published:2005-04-21 Issue:4B Volume:44 Page:2420-2423
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sim Jang Hoan,Choi Rino,Lee Byoung Hun,Young Chadwin,Zeitzoff Peter,Kwong Dim-Lee,Bersuker Gennadi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast and slow transient charging of Oxide Semiconductor Transistors;Scientific Reports;2017-09-19

2. A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs;Journal of Physics D: Applied Physics;2015-10-08

3. Manipulation of transport hysteresis on graphene field effect transistors with Ga ion irradiation;Applied Physics Letters;2014-09-29

4. Reliability Implications of Fast and Slow Degradation Processes in High-k Gate Stacks;High Permittivity Gate Dielectric Materials;2013

5. Investigation of spatial and energetic trap distributions in 1 nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping;Solid State Sciences;2011-06

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