A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs-Reference-Cited by-同舟云学术

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A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

Published:2015-10-08 Issue:44 Volume:48 Page:445104
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Hsu Chih-Chieh,Sun Jhen-Kai,Wu Chien-Hsun

Funder

Ministry of Science and Technology

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/48/i=44/a=445104/pdf

Reference61 articles.

1. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

2. High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

3. Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes

4. Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm

5. Review paper: Transparent amorphous oxide semiconductor thin film transistor

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1. Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO₂ Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel;Advanced Electronic Materials;2024-09-03

2. Electrical Performance and Reliability Enhancement of a-IGZO TFTs via Post-N₂O Plasma Optimization;IEEE Transactions on Electron Devices;2023-07

3. Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma;Plasma Science and Technology;2023-06-27

4. A study of variable range hopping conduction of a sol-gel ZnSnO thin film transistor using low temperature measurements;Physica B: Condensed Matter;2019-09

5. Low-Temperature Aqueous Route Processed Indium Oxide Thin-Film Transistors by NH3 Plasma-Assisted Treatment;IEEE Transactions on Electron Devices;2019-03

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