Manipulation of transport hysteresis on graphene field effect transistors with Ga ion irradiation
Author:
Affiliation:
1. School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, People's Republic of China
2. State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4897005
Reference39 articles.
1. The rise of graphene
2. Graphene: Status and Prospects
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5. Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
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