Metal-Organic Chemical Vapor Deposition of HfO2by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen-Reference-Cited by-同舟云学术

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Metal-Organic Chemical Vapor Deposition of HfO2by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen

Published:2004-10-08 Issue:10 Volume:43 Page:6963-6967
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Horii Sadayoshi,Yamamoto Kazuhiko,Asai Masayuki,Miya Hironobu,Kaneko Isao,Ishihara Toshinobu,Hayashi Shigenori,Niwa Masaaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=10R/a=6963/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Geometric and compositional factors on critical current density in YBa2Cu3O7−δ films containing nanorods;Superconductor Science and Technology;2018-05-11

2. Competing reactions during metalorganic deposition: Ligand-exchange versus direct reaction with the substrate surface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03

3. Hf-Based High-k Gate Dielectric Processing;High Permittivity Gate Dielectric Materials;2013

4. New Precursors for the CVD of Zirconium and Hafnium Oxide Films;Chemical Vapor Deposition;2006-05

5. HfO2 and Hf1–xSixO2 Thin Films Grown by Metal-Organic CVD Using Tetrakis(diethylamido)hafnium;Chemical Vapor Deposition;2006-03

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