HfO2 and Hf1–xSixO2 Thin Films Grown by Metal-Organic CVD Using Tetrakis(diethylamido)hafnium-Reference-Cited by-同舟云学术

HfO2 and Hf1–xSixO2 Thin Films Grown by Metal-Organic CVD Using Tetrakis(diethylamido)hafnium

Published:2006-03 Issue:2-3 Volume:12 Page:130-135
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Ohshita Y.,Ogura A.,Ishikawa M.,Kada T.,Hoshino A.,Suzuki T.,Machida H.,Soai K.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference48 articles.

1. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

2. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

3. L. Kang, Y. Jeon, K. Onishi, B. H. Lee, W. Qi, R. Nieh, S. Gopalan, J. C. Lee, 20th Symposium on VLSI Technology, Digest of Technical Papers (Eds: C. Lage, T. Nishimura), IEEE, New York 2000, p. 44.

4. J. C. Lee, W-Qi, R. Nie, L. Kang, K. Onishi, Y. Jeon, E. Dharmarjan, in Proceedings of MRS High-k Gate Dielectric Workshop (Eds: G. Wilk, V. Misra), Materials Research Society, Pittsburgh, PA 2000, p. 23.

5. Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced physical and electrical properties of HfO2 deposited by atomic layer deposition using a novel precursor with improved thermal stability;Surfaces and Interfaces;2023-11

2. Effect of doped niobium pentoxide on structure and properties of hafnium oxide films deposited by ion beam assisted deposition;Ceramics International;2023-04

3. Crystallographic structure and ferroelectricity of epitaxial hafnium oxide thin films;Journal of the Korean Ceramic Society;2021-12-07

4. CVD-derived Hf-based High-k Gate Dielectrics;Critical Reviews in Solid State and Materials Sciences;2013-01

5. The Surface Chemistry of Atomic Layer Depositions of Solid Thin Films;The Journal of Physical Chemistry Letters;2012-05-01