InGaAs/InGaAsP Quantum Well Laser at 2.04 µm for Diode Spectroscopy of Carbon Dioxide Isotope-Reference-Cited by-同舟云学术

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InGaAs/InGaAsP Quantum Well Laser at 2.04 µm for Diode Spectroscopy of Carbon Dioxide Isotope

Published:2001-11-15 Issue:Part 1, No. 11 Volume:40 Page:6406-6410
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ubukata Akinori,Dong Jie,Suzuki Katsumasa,Matsumoto Koh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extended emission wavelength beyond 2.2 μ m in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate;Applied Physics Letters;2023-04-03

2. High-output power GaSb-based diode laser with narrow n-type cladding layer;Semiconductor Lasers and Applications XII;2022-12-27

3. Strain-compensated InGaAsSb/InGaAsSb multiquantum-well structure grown on InP (0 0 1) substrate as optical absorber for wavelengths beyond 2 μm;Journal of Crystal Growth;2020-04

4. MOVPE-Grown InAs/InGaAs Multiple-Quantum-Well Lasers Emitting at 2.33 μm;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05

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