Highly Polarized Green Light Emitting Diode inm-Axis GaInN/GaN-Reference-Cited by-同舟云学术

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Highly Polarized Green Light Emitting Diode inm-Axis GaInN/GaN

Published:2010-10-15 Issue:10 Volume:3 Page:102103
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

You Shi,Detchprohm Theeradetch,Zhu Mingwei,Hou Wenting,Preble Edward A.,Hanser Drew,Paskova Tanya,Wetzel Christian

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=10/a=102103/pdf

Reference17 articles.

1. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

2. Surface preparation of substrates from bulk GaN crystals

3. Green light emitting diodes on a-plane GaN bulk substrates

4. Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures

5. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates;Semiconductor Science and Technology;2024-02-06

2. Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells;Japanese Journal of Applied Physics;2022-05-23

3. Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers;Micromachines;2021-06-09

4. Temperature‐Dependent Polarized Photoluminescence from c‐plane InGaN/GaN Multiple Quantum Wells Grown on Stripe‐Shaped Cavity‐Engineered Sapphire Substrate;physica status solidi (b);2020-04

5. Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate;Scientific Reports;2019-06-04

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