Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-44519-2.pdf
Reference43 articles.
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3. Ueda, M. et al. Polarization switching phenomena in semipolar InxGa1−xN/GaN quantum well active layers. Phys. Rev. B 78, 233303 (2008).
4. Schade, L. et al. On the optical polarization properties of semipolar InGaN quantum wells. Appl. Phys. Lett. 99, 051103 (2011).
5. Yamada, H. et al. Compositional dependence of nonpolar m-plane InxGa1−xN/GaN light emitting diodes. Appl. Phys. Express 1, 041101 (2008).
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