Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=10/a=105501/pdf
Reference18 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
3. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs
4. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
5. Characterization of strained Si wafers by X-ray diffraction techniques
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