In SituDeoxidation of GaAs Substrates by HCl Gas-Reference-Cited by-同舟云学术

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In SituDeoxidation of GaAs Substrates by HCl Gas

Published:1987-01-20 Issue:Part 2, No. 1 Volume:26 Page:L38-L40
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Massies Jean,Contour Jean-Pierre

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphological evolution of III–V semiconductors and SiO2 during low energy electron enhanced dry etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07

2. In situetching with AsBr3and regrowth in molecular beam epitaxy;Semiconductor Science and Technology;2000-02-01

3. Atomic layer in situ etching and MBE regrowth;Journal of Crystal Growth;1999-05

4. INSAP: In Situ Surface Adduct Passivation as a New Route to the Protection and Functionalization of III–V Surfaces Following MOCVD Growth;Chemical Vapor Deposition;1998-10

5. Suppression of Thermal Convection and Its Effect on Growth of GaN in Metal Organic Vapor Phase Epitaxy;Chemical Vapor Deposition;1998-10

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