Electrical Characteristics and Surface Chemistry ofP2S5-Passivated GaAs-Reference-Cited by-同舟云学术

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Electrical Characteristics and Surface Chemistry ofP2S5-Passivated GaAs

Published:1994-07-15 Issue:Part 1, No. 7A Volume:33 Page:3813-3824
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakata Minoru,Ikoma Hideaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P₂S₅/(NH₄)₂S_x-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs;IEEE Transactions on Electron Devices;2014-08

2. The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices;Journal of Physics: Condensed Matter;2013-07-17

3. Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles;Microelectronics Reliability;2012-11

4. High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT;Microelectronics Reliability;2011-08

5. Electrical Characteristics of Passivated Pseudomorphic HEMTs With $\hbox{P}_{\hbox{2}}\hbox{S}_{\hbox{5}}/(\hbox{NH}_{\hbox{4}})_{\hbox{2}}\hbox{S}_{\hbox{X}}$ Pretreatment;IEEE Transactions on Electron Devices;2008-03

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