High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT-Reference-Cited by-同舟云学术

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High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT

Published:2011-08 Issue:8 Volume:51 Page:1337-1341
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chiu Hsien-Chin,Chen Chao-Hung,Lin Che-Kai,Fu Jeffrey S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Liquid Phase Chemical Enhanced Oxidation on AlGaAs and Its Application

2. High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

3. Improvement of Impact Ionization Effect and Subthreshold Current in InAlAs/InGaAs Metal–Oxide–Semiconductor Metamorphic HEMT With a Liquid-Phase Oxidized InAlAs as Gate Insulator

4. Electrical Characteristics and Surface Chemistry ofP2S5-Passivated GaAs

5. Improved Schottky Leakage Current of In[sub 0.5]Al[sub 0.5]As∕In[sub 0.5]Ga[sub 0.5]As Metamorphic HEMTs Using (NH[sub 4])[sub 2]S[sub x] Treatment

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