Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal–Insulator–Semiconductor Structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Nitrogen Plasma Etching and Surface Passivation of GaAs via Plasma-Enhanced Atomic Layer Deposition;Integrated Ferroelectrics;2021-09-02
2. Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate;Electronics;2020-11-05
3. The impact of energy barrier height on border traps in the metal insulator semicondoctor gate stacks on III–V semiconductors;Japanese Journal of Applied Physics;2016-05-19
4. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system;AIP Advances;2015-08
5. Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks;Applied Physics Express;2012-08-22
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