Very Low Leakage Current of High Band-Gap Al$_{2}$O$_{3}$ Stacked on TiO$_{2}$/InP Metal–Oxide–Semiconductor Capacitor with Sulfur and Hydrogen Treatments-Reference-Cited by-同舟云学术

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Very Low Leakage Current of High Band-Gap Al$_{2}$O$_{3}$ Stacked on TiO$_{2}$/InP Metal–Oxide–Semiconductor Capacitor with Sulfur and Hydrogen Treatments

Published:2012-07-25 Issue: Volume:51 Page:081201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yen Chih-Feng,Lee Ming-Kwei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer;Nanomaterials;2021-12-19

2. Layer-dependent solvent vapor annealing on stacked ferroelectric P(VDF-TrFE) copolymers for highly efficient nanogenerator applications;Polymer;2020-09

3. Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3;Materials;2019-11-27

4. Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with Al2O3/TiO2 gate oxides prepared by atomic layer deposition;Solid-State Electronics;2014-10

5. Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation;Chinese Physics B;2014-01

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