Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/1/017701/pdf
Reference34 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
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1. Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO2/Al2O3 Gate Dielectrics;IEEE Transactions on Electron Devices;2023-10
2. Fermi level unpinning achievement and transport modification in Hf1-Yb O /Al2O3/GaSb laminated stacks by doping engineering;Journal of Materials Science & Technology;2022-09
3. Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb2O3/GaSb MOS Capacitors with ALD-Driven Laminated Interlayers;ACS Applied Electronic Materials;2021-02-10
4. Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process;Journal of Applied Physics;2018-11-07
5. Study on Surface Characteristics of GaSb Materials After Plasma Nitrogen Passivation;Chinese Journal of Lasers;2018
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