Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with Al2O3/TiO2 gate oxides prepared by atomic layer deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
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2. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics;Wu;Appl Phys Lett,2007
3. Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces;Hwang;Appl Phys Lett,2010
4. MOSFET transistors fabricated with high permittivity TiO2 dielectrics;Campbell;IEEE Trans Electron Devices,1997
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2. Metal oxide semiconductor-based Schottky diodes: a review of recent advances;Materials Research Express;2020-03-01
3. Titanium dioxide thin films by atomic layer deposition: a review;Semiconductor Science and Technology;2017-08-23
4. Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode;Thin Solid Films;2016-11
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