Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
3. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors
4. AlGaN/GaN MIS-HEMTs with HfO2 gate insulator
5. DC and RF Characteristics in Al2O3/Si3N4Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
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1. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures;Semiconductor Science and Technology;2023-08-11
2. Recent progress in III-nitride nanosheets: properties, materials and applications;Semiconductor Science and Technology;2021-10-27
3. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering;Journal of Applied Physics;2021-07-07
4. A first principles study of p-type doping in two dimensional GaN;Physical Chemistry Chemical Physics;2021
5. Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma;Japanese Journal of Applied Physics;2020-05-20
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