n-Type Nanocrystalline FeSi$_{2}$/intrinsic Si/p-Type Si Heterojunction Photodiodes Fabricated by Facing-Target Direct-Current Sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
1. Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation
2. Preparation of amorphous FexSi(1−x) film using unbalanced magnetron sputtering
3. Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature
4. Correlation of Structural and Optical Properties of Sputtered FeSi2Thin Films
5. Electrical and Photovoltaic Properties of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering at Room Temperature
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1. Physical feature exploration of nanocrystalline FeSi2 surface with argon plasma etching under varying power;Vacuum;2023-12
2. Reverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering;Materials Science in Semiconductor Processing;2022-08
3. Annealing effects and infrared photoelectric response of β-FeSi2 on Si (100) substrate prepared by pulsed laser deposition;Vacuum;2021-06
4. Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering;Thin Solid Films;2020-09
5. Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures;Thin Solid Films;2020-09
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