Electrical and Photovoltaic Properties of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering at Room Temperature-Reference-Cited by-同舟云学术

Electrical and Photovoltaic Properties of n-Type Nanocrystalline-FeSi2/p-Type Si Heterojunctions Prepared by Facing-Targets Direct-Current Sputtering at Room Temperature

Published:2008-07-11 Issue:7 Volume:47 Page:5420-5422
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shaban Mahmoud,Kondo Haruhiko,Nakashima Kazuhiro,Yoshitake Tsuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference7 articles.

1. Amorphous-iron disilicide: A promising semiconductor

2. Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature

3. Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

4. Optical properties of nanocrystalline FeSi2 and the effects of hydrogenation

5. A thin-film solar cell of high-quality -FeSi/Si heterojunction prepared by sputtering

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