Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference10 articles.
1. Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator
2. Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks
3. Origin of electric dipoles formed at high-k/SiO2 interface
4. Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
5. Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS
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