Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy

Published:2012-01-20 Issue:1 Volume:51 Page:01AG01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jeon Hunsoo,Lee Gang Seok,Jung Se-Gyo,Bae Seon Min,Shin Min Jeong,Kim Kyoung Hwa,Yang Min,Yi Sam Nyung,Ahn Hyung Soo,Yu Young-Moon,Huh Yoon,Kim Suck-Whan,Ha Hong-Ju,Sawaki Nobuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Magnetically enhanced etching of sub‐0.5 μm polysilicon gates

2. Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices

3. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

4. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base

5. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of AlN Epilayers on Sapphire Substrates by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method;Journal of the Korean Physical Society;2019-06

2. Electrode-Evaporation Method of III-nitride Vertical-type Single Chip LEDs;Journal of the Korean Physical Society;2018-11

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