A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage-Reference-Cited by-同舟云学术

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A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage

Published:2012-04-20 Issue: Volume:51 Page:04DP04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Han Ming-Hung,Chen Hung-Bin,Chang Chia-Jung,Wu Jia-Jiun,Chen Wen-Chong,Tsai Chi-Chong,Chang Chun-Yen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. RF CMOS comes of age

2. Optimization of the specific on-resistance of the COOLMOS/sup TM/

3. A novel high performance stacked LDD RF LDMOSFET

4. STI∕LOCOS compatible LDMOS structure in standard CMOS

5. Cost-Effective Integrated RF Power Transistor in 0.18-$muhboxm$CMOS Technology

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer;Japanese Journal of Applied Physics;2016-03-02

2. Low Specific On-resistance SOI LDMOS Device with P+P-top Layer in the Drift Region;JSTS:Journal of Semiconductor Technology and Science;2014-10-30

3. Novel Bulk Silicon Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Step Thickness Technology in Drift Region;Japanese Journal of Applied Physics;2013-12-01

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