Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 57 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lattice constant, bandgap energy, absorption coefficient and dielectric function of the antimony-rich InBixSb1-x alloy using first-principles calculations;Journal of Physics and Chemistry of Solids;2025-01
2. The roles of Bi in InAs and InAsBi nanostructure growth;Journal of Materials Chemistry C;2024
3. First-principle study of the optoelectronic properties of GaxIn1-xBiyP1-y quaternary alloys lattice-matched to InP for telecommunication applications;CAN J PHYS;2023
4. First-principle study of the optoelectronic properties of GaxIn1-xBiyP1-y quaternary alloys lattice-matched to InP for telecommunication applications;Canadian Journal of Physics;2023-09-01
5. Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy;Materials Science and Engineering: B;2023-08
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