Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs-Reference-Cited by-同舟云学术

Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs

Published:2010-10-15 Issue:10 Volume:3 Page:105602
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Lenz Andrea,Eisele Holger,Becker Jonas,Ivanova Lena,Lenz Ernst,Luckert Franziska,Pötschke Konstantin,Strittmatter André,Pohl Udo W.,Bimberg Dieter,Dähne Mario

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=10/a=105602/pdf

Reference22 articles.

1. 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

2. 20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots

3. High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots

4. Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale

5. Atomic structure of the (4×3) reconstructed InGaAs monolayer on GaAs(001)

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